document number: 93259 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 8 a fred pt ? vs-8EWH02FN-M3 vishay semiconductors features ? hyperfast recovery time ? 175 c max. operatin g junction temperature ? output rectification freewheeling ? low forward voltage drop reduced q rr and soft recovery ? low leakage current ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? meets msl level 1, per j-std-020, lf maximum peak of 260 c description/applications state of the art hyperfast reco very rectifiers specifically designed with optimized perf ormance of forward voltage drop and hyperfast recovery time. the planar structure and th e platinum doped life time control guarantee the best ov erall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/d c converters as well as freewheeling diode in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package d-pak (to-252aa) i f(av) 8 a v r 200 v v f at i f 0.97 v t rr (typ.) 23 ns t j max. 175 c diode variation single die 2, 4 3 anode 1 n/c d-pak (to-252aa) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 200 v average rectified forward current i f(av) t c = 156 c 8 a non-repetitive peak surge current i fsm t j = 25 c 140 peak repetitive forward current i fm t c = 156 c, f = 20 khz, d = 50 % 16 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 8 a - 0.91 0.97 i f = 8 a, t j = 150 c - 0.75 0.85 reverse leakage current i r v r = v r rated - - 5 a t j = 150 c, v r = v r rated - 6 60 junction capacitance c t v r = 600 v - 22 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93259 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 31-mar-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-8EWH02FN-M3 vishay semiconductors hyperfast rectifier, 8 a fred pt ? dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 23 27 ns i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 27 - t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 160 v -24- t j = 125 c - 33 - peak recovery current i rrm t j = 25 c - 2.3 - a t j = 125 c - 4.3 - reverse recovery charge q rr t j = 25 c - 27 - nc t j = 125 c - 70 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -1.72.5c/w approximate weight 0.3 g 0.01 oz. marking device case styl e d-pak (to-252aa) 8ewh02fn
document number: 93259 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-8EWH02FN-M3 hyperfast rectifier, 8 a fred pt ? vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.2 0.4 0.8 1.2 0.6 1.0 1.4 1.6 1.8 0.1 1 10 100 93259_01 t j = 125 c t j = 25 c t j = 175 c i r - reverse current (a) v r - reverse voltage (v) 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 93259_02 t j = 125 c t j = 175 c t j = 150 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 0 50 100 150 200 10 100 93259_03 0.1 1 10 0.00001 93259_04 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 s ingle pul s e (thermal re s i s tance)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93259 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 31-mar-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-8EWH02FN-M3 vishay semiconductors hyperfast rectifier, 8 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r allowable case temperature (c) i f(av) - average forward current (a) 8 6 4 212 10 14 0 160 180 120 140 150 170 130 93259_05 sq uare wave (d = 0.50) rated v r applied s ee note (1) dc average power loss (w) i f(av) - average forward current (a) 810 6 4 2 12 0 93259_06 8 10 12 0 4 6 2 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 rm s limit dc t rr (ns) di f /dt (a/s) 100 93259_07 1000 10 50 25 35 45 20 15 30 40 8 a, t j = 25 c 8 a, t j = 125 c q rr (nc) di f /dt (a/s) 100 93259_08 1000 0 120 40 60 100 80 20 8 a, t j = 25 c 8 a, t j = 125 c
document number: 93259 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-8EWH02FN-M3 hyperfast rectifier, 8 a fred pt ? vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93259 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 31-mar-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-8EWH02FN-M3 vishay semiconductors hyperfast rectifier, 8 a fred pt ? ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-8EWH02FN-M3 75 3000 ant istatic plastic tube vs-8ewh02fntr-m3 2000 200 0 13" diameter reel vs-8ewh02fntrl-m3 3000 300 0 13" diameter reel vs-8ewh02fntrr-m3 3000 300 0 13" diameter reel links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95176 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95384 2 - current rating (8 = 8 a) 4 - package identifier: w = d-pak e = single diode 5 - h = hyperfast recovery 6 - voltage rating (02 = 200 v) 7 - fn = to-252aa 8 - tr = tape and reel none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) 3 - circuit configuration: 1 - vishay semiconductors product - environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 9 device code 5 1 3 2 4 6 7 8 9 vs- 8 e w h 02 fn trl -m3
document number: 95016 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 04-nov-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 d-pak (to-252aa) outline dimensions vishay high power products notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a mi nimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not include mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 applied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa dimensions in millimeters and inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b 3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b 2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? ga u ge plane lead tip m 0.010 cab m 32 4 1 e1 d1 mi n . 0.265 (6.74) mi n . 0.245 (6.23) mi n . 0.0 8 9 (2.2 8 ) mi n . 0.06 (1.524) 0.4 88 (12.40) 0.409 (10.40) 0.093 (2.3 8 ) 0.0 8 5 (2.1 8 ) pad layout
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